advanced power n-channel enhancement mode electronics corp. power mosfet capable of 1.8v gate drive bv dss 20v simple drive requirement r ds(on) 90m surface mount package i d 2.5a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 150 /w data and specifications subject to change without notice total power dissipation 0.833 -55 to 150 200810013 thermal data parameter 1 operating junction temperature range -55 to 150 linear derating factor 0.006 storage temperature range continuous drain current 3 , v gs @ 4.5v 2.0 pulsed drain current 1 10 gate-source voltage + 8 continuous drain current 3 , v gs @ 4.5v 2.5 parameter rating drain-source voltage 20 AP2322GN rohs-compliant product g d s d g s sot-23 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the sot-23 package is widely used for commercial-industrial applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.02 - v/ : r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =1.6a - - 90 m ? ? ? ?
AP2322GN fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 2 4 6 8 10 0 0.5 1 1.5 2 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c v g = 2.0 v 5.0v 4.0v 3.0v 2.5v 0 2 4 6 8 10 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 5.0v 4. 0 v 3.0 v 2.5v v g = 2.0 v 40 60 80 100 120 0246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =0.3a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 1.6 a v g =4.5v 0.0 0.2 0.4 0.6 0.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge circuit 4 AP2322GN 0 2 4 6 8 10 12 0 4 8 12 16 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =2.2a v ds =8v v ds =12v v ds =16v 10 100 1000 1 5 9 13 17 21 25 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss q v g 4.5v q gs q gd q g charge 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 360 : /w t t 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 1ms 10ms 100ms 1s dc t a =25 o c single pulse 0 2 4 6 8 10 0123 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
package outline : sot-23 millimeters min nom max a 1.00 1.15 1.30 a1 0.00 -- 0.10 a2 0.10 0.15 0.25 d1 0.30 0.40 0.50 e 1.70 2.00 2.30 d 2.70 2.90 3.10 e 2.40 2.65 3.00 e1 1.40 1.50 1.60 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : sot-23 advanced power electronics corp. symbols noyy part number : no d e1 e e d1 a a1 a2 date code : yy yy:2004,2008,2012? yy :2003,2007,2011? y y:2002,2006,2010? yy :2001,2005,2009? 5
|
